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Applied Surface Science

Volumn 164, Issue 1-4, 2000, Pages 241-245

GaN and GaInN quantum dots: An efficient way to get luminescence in the visible spectrum range

(4) Damilano, B a Grandjean, N a Massies, J a Semond, F a

a CNRS (France)

Author keywords

GaInN; GaN; Quantum dots; Si substrate

Indexed keywords

EID: 0034274250 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(00)00342-1 Document Type: Article

Times cited : (33)

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- B. Damilano, N. Grandjean, F. Semond, J. Massies, M. Leroux, Phys. Stat. Sol. B, to be published.
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- Damilano, B.¹ Grandjean, N.² Semond, F.³ Massies, J.⁴ Leroux, M.⁵

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