Properties of InN layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 84, Issue 10, 2004, Pages 1671-1673

  Ive, Tommy ^a   Brandt, Oliver ^a   Ramsteiner, Manfred ^a   Giehler, Manfred ^a   Kostial, Helmar ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; DESORPTION; DISSOCIATION; ENERGY GAP; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HALL EFFECT; HIGH ENERGY ELECTRON DIFFRACTION; LIGHT TRANSMISSION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

HALL MOBILITY; OPTICAL TRANSMISSION SPECTROSCOPY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PAMBE);

INDIUM COMPOUNDS;

EID: 1842476945     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1668318     Document Type: Article

References (16)

1. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Status Solidi B 229, R1 (2002).
2. V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, Phys. Status Solidi B 230, R4 (2002).
3. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
4. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 80, 4741 (2002).
5. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
6. T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
7. W. Z. Shen, L. F. Jiang, H. F. Yang, and F. Y. Meng, Appl. Phys. Lett. 80, 2063 (2002).
8. H. Lu, W. J. Schaff, J. Hwang, H. Wu, G. Koley, and L. Eastman, Appl. Phys. Lett. 79, 1489 (2001).
9. M. Higashiwaki and T. Matsui, Jpn. J. Appl. Phys., Part 2 41, L540 (2002).
10. K. Xu and A. Yoshikawa, Appl. Phys. Lett. 83, 251 (2003).
11. O. Brandt, R. Muralidharan, P. Waltereit, A. Thamm, A. Trampert, H. von Kiedrowski, and K. H. Ploog, Appl. Phys. Lett. 75, 4019 (1999).
12. V. V. Mamutin, V. A. Vekshin, V. Y. Davydov, V. V. Ratnikov, T. V. Shubina, S. V. Ivanov, P. S. Kopev, M. Karlsteen, U. Södervall, and M. Willander, Phys. Status Solidi A 176, 247 (1999).
13. V. V. Mamutin, V. A. Vekshin, V. Y. Davydov, V. V. Ratnikov, Y. A. Kudriavtsev, B. Y. Ber, V. V. Emtsev, and S. V. Ivanov, Phys. Status Solidi A 176, 373 (1999).
14. T. Inushima, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, T. Sakon, M. Motokawa, and S. Ohoya, J. Cryst. Growth 227/228, 481 (2001).
15. V. Y. Davydov, V. V. Emtsev, I. N. Goncharuk, A. N. Smirnov, V. D. Petrikov, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, M. B. Smirnov, and T. Inushima, Appl. Phys. Lett. 75, 3297 (1999).
16. J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. B 66, 201403 (2002).