Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2502-2505

  Onojima, N ^a   Suda, J ^a,b   Kimoto, T ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN LAYERS; CRYSTALLINE QUALITY; CRYSTALLINE STRUCTURE; HIGH QUALITY; NON-POLAR; RMS ROUGHNESS; SIC SUBSTRATES; STACKING STRUCTURES;

ALUMINUM NITRIDE; EPITAXIAL GROWTH; MOLECULAR BEAMS; NITRIDES; SILICON CARBIDE; X RAY DIFFRACTION;

SUBSTRATES;

EID: 84875114996     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303396     Document Type: Conference Paper

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