Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 332-341

  Eliseev, Petr G ^a,c   Osinski, Marek ^a   Lee, Jinhyun ^a   Sugahara, Tomoya ^b   Sakai, Shiro ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

^c LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

BAND TAIL; HOMOEPITAXIAL STRUCTURES; SPECTRAL SHIFT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033885855     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0073-9     Document Type: Article

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