Influence of substrate polarity on growth of InN films by RF-MBE

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2810-2813

  Matsuda, Fumie ^a   Saito, Yoshiki ^a   Muramatsu, Tomo ^a   Yamaguchi, Tomohiro ^a   Matsuo, Yuriko ^b   Koukitu, Akinori ^b   Araki, Tsutomu ^a   Nanishi, Yasushi ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C-FACE SIC; FREESTANDING GAN SUBSTRATES; INN FILMS; LOWER TEMPERATURES; SI-FACE SIC;

GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SILICON; SILICON CARBIDE;

SUBSTRATES;

EID: 84875113081     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303532     Document Type: Conference Paper

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