Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

Physica Status Solidi (B) Basic Research

Volumn 240, Issue 2, 2003, Pages 314-317

  Brault, J ^a,d   Bellet Amalric, E ^a   Tanaka, S ^a,c   Enjalbert, F ^a   Le Si Dang, D ^a   Sarigiannidou, E ^a   Rouviere, J L ^a   Feuillet, G ^b   Daudin, B ^a  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

^c HOKKAIDO UNIVERSITY   (Japan)

^d INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345357957     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200303268     Document Type: Conference Paper

References (9)

1. N. Stath, V. Härle, and J. Wagner, Mater. Sci. Eng. B 80, 224 (2001).
2. S. Yamada, J.-I. Kato, S. Tanaka, I. Suemune, A. Avramescu, Y. Aoyagi, N. Teraguchi, and A. Suzuki, Appl. Phys. Lett. 78, 3612 (2001).
3. C. D. Lee, A. Sagar, R. M. Feenstra, C. K. Inoki, T. S. Kuan, W. L. Sarney, and L. Salamanca-Riba, Appl. Phys. Lett. 79, 3428 (2001).
4. O. Brandt, R. Muralidharan, A. Thamm, P. Waltereit, and K. H. Ploog, Appl. Surf. Sci. 175-176, 419 (2001).
5. M. H. Xie, L. X. Zheng, S. H. Cheung, Y. F. Ng, H. Wu, S. Y. Tong, and N. Ohtani, Appl. Phys. Lett. 77, 1105 (2000).
6. B. Heying, E. J. Tersa, C. R. Elsass, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 85, 6470 (1999).
7. Y. J. Sun, O. Brandt, T. Y. Liu, A. Trampert, K. H. Ploog, J. Bläsing, and A. Krost, Appl. Phys. Lett. 81, 4928 (2002).
8. E. Monroy, B. Daudin, E. Bellet-Amalric, N. Gogneau, D. Jalabert, F. Enjalbert, J. Brault, J. Barjon, and Le Si Dang, J. Appl. Phys. 93, 1550 (2003).
9. G. Feuillet, B. Daudin, F. Widmann, J. L. Rouviere, and M. Arlery, J. Cryst. Growth 189/190, 142 (1998).