Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 3108-3110

  Brault, J ^a   Tanaka, S ^a,c   Sarigiannidou, E ^a   Rouviere J L ^a   Daudin, B ^a   Feuillet, G ^b   Nakagawa, H ^c  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NUCLEATION; SELF ASSEMBLY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

SURFACE PREPARATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037349860     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1538334     Document Type: Article

References (20)

1. For a review, see D. Bimberg, M. Grundmann, and N. Ledentsov, Quantum Dots Heterostructures (Wiley, new york, 1999).
2. C. Lee and A.-L. Barabási, Appl. Phys. Lett. 73, 2651 (1998); L. Nurminen, A. Kuronen, and K. Kaski, Phys. Rev. B 63, 035407 (2001).
3. C. Lee and A.-L. Barabási, Appl. Phys. Lett. 73, 2651 (1998); L. Nurminen, A. Kuronen, and K. Kaski, Phys. Rev. B 63, 035407 (2001).
4. Y. H. Xie, S. B. Samavedam, M. Bulsara, T.A. Langdo, and E. A. Fitzgerald, Appl. Phys. Lett. 71, 3567 (1997).
5. T. I. Kamins and R. Stanley Williams, Appl. Phys. Lett. 71, 1201 (1997).
6. R. Leon, T. J. Senden, Y. Kim, C. Jagadish, and A. Clark, Phys. Rev. Lett. 78, 4942 (1997).
7. J-h. Zhu, K. Brunner, and G. Abstreiter, Appl. Phys. Lett. 73, 620 (1998).
8. J. Tersoff, Y. H. Phang, Z. Zhang, and M. G. Lagally, Phys. Rev. Lett. 75, 2730 (1995); F. Liu, J. Tersoff, and M. G. Lagally, ibid. 80, 1268 (1998).
9. J. Tersoff, Y. H. Phang, Z. Zhang, and M. G. Lagally, Phys. Rev. Lett. 75, 2730 (1995); F. Liu, J. Tersoff, and M. G. Lagally, ibid. 80, 1268 (1998).
10. B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, and J. L. Rouvière, Phys. Rev. B 56, R7069 (1997).
11. C. Adelmann, M. Arlery, B. Daudin, G. Feuillet, G. Fishman, Le Si Dang, H. Mariette, N. Pelekanos, J. L. Rouvière, J. Simon, and F. Widmann, C. R. Acad. Sci. Paris, t. 1, Série IV, 61 (2000).
12. S. Yamada, J.-i. Kato, S. Tanaka, I. Suemune, A. Avramescu, Y. Aoyagi, N. Teraguchi, and A. Suzuki, Appl. Phys. Lett. 78, 3612 (2001).
13. H. Nakagawa and S. Tanaka (unpublished).
14. P. Tejedor, P. Smilauer, and B. A. Joyce, Surf. Sci. 424, L309 (1999).
15. G. Mula, C. Adelmann, S. Moehl, J. Oullier, and B. Daudin, Phys. Rev. B 64, 195406 (2001).
16. C. Adelmann, N. Gogneau, E. Sarigiannidou, J. L. Rouvière, and B. Daudin, Appl. Phys. Lett. 81, 3064 (2002).
17. R. Leon, C. Lobo, A. Clark, R. Bozek, A. Wysmolek, A. Kurpiewski, and M. Kaminska, J. Appl. Phys. 84, 248 (1998).
18. R. L. Schwoebel and E. J. Shipsey, J. Appl. Phys. 37, 3682 (1966).
19. D. Lacombe, A. Ponchet, S. Fréchengues, V. Drouot, N. Bertru, B. Lambert, and A. Le Corre, Appl. Phys. Lett. 74, 1680 (1999).
20. H. Z. Xu, K. Akahane, H. Z. Song, Y. Okada, and M. Kawabe, J. Cryst. Growth 234, 509 (2002), and references therein.