Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

Applied Physics Letters

Volumn 73, Issue 5, 1998, Pages 668-670

  Rouviere, J L ^a   Weyher, J L ^b,c   Seelmann Eggebert, M ^b   Porowski, S ^c  

^a CEA GRENOBLE   (France)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343828805     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121942     Document Type: Article

References (16)

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