GaN grown on two-step cleaned C-terminated 6H-SiC by molecular-beam epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 19, Issue 1, 2001, Pages 280-286

  Guan, Z P ^a  

^a MISSOURI STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; DESORPTION; GRAPHITE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA HEATING; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINE DAMAGE; SURFACE DANGLING BONDS;

GALLIUM NITRIDE;

EID: 0035101580     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1329120     Document Type: Article

References (2)

1. J. F. Schetzina, Mater. Res. Soc. Symp. Proc. 395, 123 (1996).
2. R. F. Davis, T. W. Weeks, Jr., M. D. Bremser, S. Tanaka, R. S. Kern, Z. Sitar, K. S. Alley, W. G. Perry, and C. Wang, Mater. Res. Soc. Symp. Proc. 395, 3 (1996).