Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

Applied Physics Letters

Volumn 69, Issue 3, 1996, Pages 337-339

  Ponce, F A ^a   Bour, D P ^a   Young, W T ^b   Saunders, M ^b   Steeds, J W ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001712691     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118052     Document Type: Article

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