The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 72-75

  Ruterana, P ^a   Vermaut, P ^a   Potin, V ^a   Nouet, G ^a   Botchkarev, A ^b   Salvador, A ^b   Morkoc H ^b  

^a CNRS   (France)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

AlN; Convergent beam electron diffraction, CBED; Gallium nitrides, GaN; Growth mechanism; Inversion domain; Molecular beam epitaxy, MBE; Nucleation; SiC substrates; Stacking; Stacking faults; Steps; Transmission electron microscopy, TEM

Indexed keywords

CRYSTAL DEFECTS; ELECTRON CYCLOTRON RESONANCE; MOLECULAR BEAM EPITAXY; NUCLEATION; SAPPHIRE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENCE BEAM ELECTRON DIFFRACTION (CBED); INVERSION DOMAIN BOUNDARIES (IDB);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0002201990     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00170-0     Document Type: Article

References (21)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Mitsushita, H. Kiyoku, Y. Sugimoto, Jpn. J. Appl. Phys. 35 (1996) L74.
2. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns, J. Appl. Phys. 76 (1994) 1363.
3. P. Stadelmann, Ultramicroscopy 21 (1987) 131.
4. P. Ruterana, P. Vermaut, G. Nouet, A. Salvador, H. Morkoç, Mater. Res. Soc. Internet Journal of Nitride Semiconductor Research vol. 2 (1997) paper 42.
5. P. Vermaut, P. Ruterana, G. Nouet, A. Salvador, H. Morkoç, Inst. Phys. Conf. Ser. 146 (1995) 289.
6. X.J. Ning, F.R. Chien, P. Pirouz, J.W. Yang, M.A. Khan, J. Mater. Res. 11 (1996) 580.
7. F. Ponce, MRS Bull. 22 (1997) 51.
8. P. Vermaut, P. Ruterana, G. Nouet, A. Salvador, H. Morkoç, Mater. Res. Symp. Proc. 423 (1996) 551.
9. P. Vermaut, P. Ruterana, G. Nouet, A. Salvador, H. Morkoç, Philos. Mag. A75 (1997) 239.
10. P. Vermaut, P. Ruterana, G. Nouet, A. Salvador, H. Morkoç, Mater. Sci. Eng. B43 (1997) 279.
11. P. Vermaut, P. Ruterana, G. Nouet, A. Salvador, H. Morkoç, Presented in MSM-X, April 10-13th 1997, accepted for publication in Inst. Phys. Conf. Ser., 1997.
12. C.M. Drum, Philos. Mag. A11 (1965) 1315.
13. P. Vermaut, P. Ruterana, G. Nouet, A. Salvador, H. Morkoç, Mat. Res. Soc. Internet Journal of Nitride Semiconductor Research, vol. 1 (1996) paper 42.
14. P. Vermaut, PhD dissertation, Université de Caen, 1997.
15. V. Potin, P. Ruterana, G. Nouet, H. Morkoç, Presented in MSM-X Oxford April 10-13th 1997, accepted for publication in Inst. Phys. Conf. Ser., 1997.
16. V. Potin, P. Ruterana, G. Nouet, J. Appl. Phys. 82 (1997) 2176.
17. D.B. Holt, J. Phys. Chem. Solids 30 (1969) 1297.
18. P. Vermaut, P. Ruterana, G. Nouet, Philos. Mag. A 76 (1997) 1215.
19. P. Vennegues, B. Beaumont, M. Vaille, P. Gibart, Appl. Phys. Lett. 70 (1997) 2434.
20. S. Tanaka, R.S. Kern, R.F. Davis, Appl. Phys. Lett. 66 (1995) 37.
21. B.N. Sverdlov, G.A. Martin, H. Morkoç, D.J. Smith, Appl. Phys. Lett. 67 (1995) 3064.