Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1457-1460

  Ng, H M ^a,c   Moustakas, T D ^a   Ludwig Jr , K F ^b  

^a Boston University   (United States)

^b Boston University   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

INDIUM GALLIUM ARSENIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034187493     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591403     Document Type: Article

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