Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1209-1212

  Zubrilov, A S ^a   Nikishin, S A ^a   Kipshidze, G D ^a   Kuryatkov, V V ^a   Temkin, H ^a   Prokofyeva, T I ^b   Holtz, M ^b  

^a Department of Electrical and Computer Engineering   (United States)

^b TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE PROFILING; DIFFERENT MECHANISMS; EDGE LUMINESCENCE; ELECTRON CONCENTRATION; FREE EXCITONS; LONGITUDINAL OPTICAL; LOW BACKGROUND; RAMAN INTENSITIES; SI (1 1 1); STRONG CORRELATION; TEMPERATURE DEPENDENCE;

AMMONIA; BINDING ENERGY; EPITAXIAL GROWTH; FILM GROWTH; GAS SOURCE MOLECULAR BEAM EPITAXY; OPTICAL CORRELATION; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SILICON;

GALLIUM NITRIDE;

EID: 0036470593     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430535     Document Type: Article

References (38)

1. E. S. Hellman, D. N. E. Buchanan, and C. H. Chen, MRS Internet J. Nitride Semicond. Res. 3, 43 (1998). mrj MIJNF7 1092-5783
2. O. Aktas, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, S. N. Mohammad, B. Sverdlov, and H. Morkoç, Electron. Lett. 31, 1389 (1995). ell ELLEAK 0013-5194
3. R. J. Molnar, R. Singh, and T. Moustakas, Appl. Phys. Lett. 66, 268 (1995). apl APPLAB 0003-6951
4. N. Grandjean, J. Massies, M. Leroux, and P. Lorenzini, Appl. Phys. Lett. 72, 82 (1998). apl APPLAB 0003-6951
5. S. Guha and N. A. Bojarzuk, Appl. Phys. Lett. 72, 415 (1998). apl APPLAB 0003-6951
6. I. P. Smorchkova et al., Appl. Phys. Lett. 76, 718 (2000). apl APPLAB 0003-6951
7. M. A. Sánchez-García, F. B. Narajo, J. L. Pau, A. Jimenez, E. Calleja, and E. Muñoz, J. Appl. Phys. 87, 1569 (2000). jap JAPIAU 0021-8979
8. P. W. Deelman, R. N. Bicknell-Tassius, S. A. Nikishin, V. V. Kuryatkov, and H. Temkin, Appl. Phys. Lett. 78, 2172 (2001). apl APPLAB 0003-6951
9. N. Grandjean, J. Massies, B. Damilano, S. Yu. Karpov, and R. A. Talalaev, Appl. Phys. Lett. 74, 1854 (1999). apl APPLAB 0003-6951
10. S. Yu. Karpov, R. A. Talalaev, Yu. N. Makarov, N. Grandjean, J. Massies, and B. Damilano, Surf. Sci. 450, 191 (2000). sus SUSCAS 0039-6028
11. H. Tang and J. B. Webb, Appl. Phys. Lett. 74, 2373 (1999). apl APPLAB 0003-6951
12. S. A. Nikishin et al., Appl. Phys. Lett. 75, 484 (1999). apl APPLAB 0003-6951
13. G. Kipshidze, H. P. Schenk, A. Fissel, U. Kaiser, J. Schulze, Wo. Richter, M. Weihnacht, R. Kunze, and J. Kräusslich, Semiconductors 33, 1241 (1999). sem SMICES 1063-7826
14. S. A. Nikishin et al., Appl. Phys. Lett. 75, 2073 (1999). apl APPLAB 0003-6951
15. F. Semond, P. Lorenzini, N. Grandjean, and J. Massies, Appl. Phys. Lett. 78, 335 (2001). apl APPLAB 0003-6951
16. S. A. Nikishin et al., Mater. Res. Soc. Symp. Proc. 595, W8.3.1-(6) (2000). mrs MRSPDH 0272-9172
17. S. A. Nikishin, N. N. Faleev, H. Temkin, and S. N. G. Chu, Proc.-Electrochem. Soc. 99-17, 238 (1999). pes PESODO 0161-6374
18. R. Rinaldi, S. Antonaci, M. Anni, M. Lomascolo, R. Cingolani, A. Botchkarev, and H. Morkoc, Phys. Status Solidi B 216, 701 (1999). psb PSSBBD 0370-1972
19. E. Calleja et al., Phys. Rev. B 58, 1550 (1998). prb PRBMDO 0163-1829
20. M. Holtz, M. Seon, T. Prokofyeva, H. Temkin, R. Singh, F. P. Dabkowski, and T. D. Moustakas, Appl. Phys. Lett. 75, 1757 (1999). apl APPLAB 0003-6951
21. S. Nikishin et al., J. Vac. Sci. Technol. B 19, 1409 (2001). jvb JVTBD9 0734-211X
22. A. Mooradian and G. B. Wright, Phys. Rev. Lett. 16, 999 (1966). prl PRLTAO 0031-9007
23. T. Kozawa, T. Kachi, H. Kano, Y. Taga, M. Hashmoto, N. Koide, and K. Manabe, J. Appl. Phys. 75, 1098 (1993). jap JAPIAU 0021-8979
24. A. Pinczuk and E. Burstein, Phys. Rev. Lett. 21, 1073 (1968). prl PRLTAO 0031-9007
25. B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li, H. Amano, and I. Akasaki, MRS Internet J. Nitride Semicond. Res. 1, 2 (1996). mrj MIJNF7 1092-5783
26. M. Smith, G. D. Chen, J. K. Lin, H. X. Jiang, M. Asif Khan, C. J. Sun, Q. Chen, and J. W. Yang, J. Appl. Phys. 79, 7001 (1996). jap JAPIAU 0021-8979
27. D. Bimberg, M. Sondergeld, and E. Grobe, Phys. Rev. B 4, 3451 (1971). prq PLRBAQ 0556-2805
28. D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. Akasaki, Phys. Rev. B 54, 2518 (1996). prb PRBMDO 0163-1829
29. M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, Phys. Status Solidi B 216, 605 (1999). psb PSSBBD 0370-1972
30. H. Teisseyere, P. Perlin, T. Susuki, I. Grzegory, S. Porovski, J. Jun, A. Pietraszko, and T. D. Moustakas, J. Appl. Phys. 76, 2429 (1994). jap JAPIAU 0021-8979
31. R. Passler, Phys. Status Solidi B 200, 155 (1997). psb PSSBBD 0370-1972
32. Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York, 2001), p. 194.
33. Y. P. Varshni, Physica (Amsterdam) 34, 149 (1967). phy PHYSAG 0031-8914
34. A. S. Zubrilov, V. I. Nikolaev, D. V. Tsvetkov, V. A. Dmitriev, K. G. Irvine, J. A. Edmond, and C. H. Carter, Jr., Appl. Phys. Lett. 67, 533 (1995). apl APPLAB 0003-6951
35. A. S. Zubrilov, Yu. V. Melnik, A. E. Nikolaev, M. A. Jakobson, D. K. Nelson, and V. A. Dmitriev, Semiconductors 33, 1067 (1999). sem SMICES 1063-7826
36. B. Monemar, I. A. Buyanova, and J. P. Bergman., Abstracts of ICSCIII-N'97, Stockholm, Sweden, August 31-September 5, 1997, pp. 676-677.
37. S. Rudin, T. L. Reinicke, and B. Segall, Phys. Rev. B 42, 11218 (1990). prb PRBMDO 0163-1829
38. M. Ilegems, R. Dingle, and R. A. Cogan, J. Appl. Phys. 43, 3797 (1972). jap JAPIAU 0021-8979