Electrical characterization of acceptor levels in Be-implanted GaN

Applied Physics Letters

Volumn 81, Issue 21, 2002, Pages 3990-3992

  Nakano, Yoshitaka ^a   Jimbo, Takashi ^b  

^a Rd Management Section   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BERYLLIUM; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; SCHOTTKY BARRIER DIODES; SPECTROSCOPY; THIN FILMS;

ACCEPTOR LEVELS;

GALLIUM NITRIDE;

EID: 0037132241     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1523633     Document Type: Article

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