High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 74, Issue 23, 1999, Pages 3528-3530

  Elsass, C R ^a   Smorchkova, I P ^a   Heying, B ^a   Haus, E ^a   Fini, P ^a   Maranowski, K ^a   Ibbetson, J P ^a   Keller, S ^a   Petroff, P M ^a   DenBaars, S P ^a   Mishra, U K ^a   Speck, J S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NUCLEATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SHUBNIKOV-DE HAAS EFFECT;

PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; TWO-DIMENSIONAL ELECTRON GAS CHANNELS;

HETEROJUNCTIONS;

EID: 0032606507     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124150     Document Type: Article

References (9)

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