Polarity control of GaN grown on sapphire substrate by RF-MBE

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 II, 2002, Pages 1003-1007

  Xu, Ke ^a   Yano, N ^a   Jia, A W ^a   Yoshikawa, A ^a   Takahashi, K ^b  

^a CHIBA UNIVERSITY   (Japan)

^b TEIKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

A1. coaxial ion collision impact scattering spectroscopy; A1. Polarity; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy

Indexed keywords

GALLIUM NITRIDE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

POLARITY CONTROL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 19244374493     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02116-9     Document Type: Article

References (9)