Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 12, 1997, Pages R7069-R7072

  Daudin, B ^a   Widmann, F ^a   Feuillet, G ^a   Samson, Y ^a   Arlery, M ^a   Rouviere J ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001196684     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.R7069     Document Type: Article

References (8)

1. J. Cibert, Y. Gobil, Le Si Dang, S. Tatarenko, G. Feuillet, P. H. Jouneau, and K. Saminadayar, Appl. Phys. Lett. 56, 292 (1990).
2. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).
3. S. Guha, A. Madhukar, and K. C. Rajkuma, Appl. Phys. Lett. 57, 2110 (1990) and references therein.
4. R. Nötzel et al., Appl. Phys. Lett. 65, 2854 (1994).
5. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, J. Appl. Phys. 78, 3691 (1995).
6. Z. Sitar, L. L. Smith, and R. F. Davis, J. Cryst. Growth 141, 11 (1994).
7. Chinkyo Kim, I. K. Robinson, Jaemin Myoung, Kyuhwan Shim, Myung-Cheol Yoo, and Kyekyoon Kim, Appl. Phys. Lett. 69, 2358 (1996).
8. Satoru Tanaka, Sohachi Iwai, and Yoshinobu Aoyagi, Appl. Phys. Lett. 69, 4096 (1996).