Growth of cubic InN on InAs(0 0 1) by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 396-398

  Lima, A P ^a   Tabata, A ^a   Leite, J R ^a   Kaiser, S ^b   Schikora, D ^c   Schottker B ^c   Frey, T ^c   As, D J ^c   Lischka, K ^c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE);

SEMICONDUCTING FILMS;

EID: 0032640785     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01359-1     Document Type: Article

References (6)

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