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Volumn 34, Issue 1-2, 2003, Pages 63-75

Band gaps of InN and group III nitride alloys

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVES; ELECTRON MOBILITY; ENERGY GAP; FILM GROWTH; GALLIUM ALLOYS; HYDROSTATIC PRESSURE; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; POLYCRYSTALLINE MATERIALS; SPUTTERING;

EID: 10844225498     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.03.069     Document Type: Conference Paper
Times cited : (186)

References (43)
  • 8
    • 0001112505 scopus 로고
    • Intern. Symp. on GaAs and related compounds, Karuizawa, 1989
    • T. Matsuoka, H. Tanaka, A. Katsui, Intern. Symp. On GaAs and Related Compounds, Karuizawa, 1989, Int. Phys. Conf. Series, vol. 106, 1990, p. 141.
    • (1990) Int. Phys. Conf. Series , vol.106 , pp. 141
    • Matsuoka, T.1    Tanaka, H.2    Katsui, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.