High-quality and thick InN films grown on 2-inch sapphire substrate by molecular-beam epitaxy

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2790-2793

  Xu, K ^a,b   Hashimoto, N ^a   Cao, B ^a   Hata, T ^a   Terashima, W ^a   Yoshitani, M ^a   Ishitani, Y ^a,b   Yoshikawa, A ^a,b  

^a CHIBA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CONCENTRATION; GROWTH STEPS; HIGH QUALITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RADIO FREQUENCIES; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; THICK INN FILMS;

EPITAXIAL GROWTH; NITRIDES; SAPPHIRE;

MOLECULAR BEAM EPITAXY;

EID: 84875108396     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303269     Document Type: Conference Paper

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