Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 276-281

  Sanchez Garcia M A ^a   Calleja, E ^a   Sanchez, F J ^a   Calle, F ^a   Monroy, E ^a   Basak, D ^a   Munoz E ^a   Villar, C ^b   Sanz Hervas, A ^b   Aguilar, M ^a   Serrano, J J ^a   Blanco, J M ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

III nitrides; Molecular beam epitaxial (MBE) growth; n and p type doping

Indexed keywords

EID: 0000208715     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0399-2     Document Type: Article

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