Photoemission study of energy-band alignment for RuOx/HfO 2/Si system

Applied Physics Letters

Volumn 85, Issue 25, 2004, Pages 6155-6157

  Li, Q ^a   Wang, S J ^b   Li, K B ^c   Huan, A C H ^a,b   Chai, J W ^b   Pan, J S ^b   Ong, C K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIELECTRIC MATERIALS; ELECTRODES; HAFNIUM COMPOUNDS; OXIDATION; OXIDES; PHOTOEMISSION; PLASMAS; SILICON; SPUTTERING; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTIVE OXIDES; OXYGEN PLASMA; ULTRAHIGH VACUUM SPUTTERING; VACUUM SPUTTERING;

RUTHENIUM COMPOUNDS;

EID: 20444433980     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1839287     Document Type: Article

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