Interface formation and defect structures in epitaxial La 2Zr2O7 thin films on (111) Si

Applied Physics Letters

Volumn 83, Issue 25, 2003, Pages 5211-5213

  Seo, J W ^a   Fompeyrine, J ^b   Guiller, A ^b   Norga, G ^b   Marchiori, C ^b   Siegwart, H ^b   Locquet, J P ^b  

^a EPFL   (Switzerland)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DEFECTS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; OXIDATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; STRUCTURE (COMPOSITION); SURFACE PHENOMENA; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ATOMIC PRESSURE; EPITAXIAL STRUCTURES; STRUCTURAL COMPATIBILITY;

THIN FILMS;

EID: 0942299449     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1635966     Document Type: Article

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