Threshold voltage instabilities in high-κ gate dielectric stacks

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 1, 2005, Pages 45-64

  Zafar, Sufi ^a   Kumar, Arvind ^a   Gusev, Evgeni ^a   Cartier, E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Charge trapping; High k; Hot carriers; NBTI; Threshold voltage reliability

Indexed keywords

CHARGE CARRIERS; ELECTRON TRAPS; FIELD EFFECT TRANSISTORS; HOT CARRIERS; LEAKAGE CURRENTS; PERMITTIVITY; RELIABILITY; SILICA; THRESHOLD VOLTAGE;

CHARGE TRAPPING; HIGH Κ; NEGATIVE BIAS STRESSING (NBTI); THRESHOLD VOLTAGE RELIABILITY;

DIELECTRIC MATERIALS;

EID: 20644440412     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2005.845880     Document Type: Article

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