Epitaxial oxides on silicon grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 936-943

  Droopad, Ravi ^a   Yu, Zhiyi ^a   Ramdani, Jamal ^a   Hilt, Lyndee ^a   Curless, Jay ^a   Overgaard, Corey ^a   Edwards, John L ^a   Finder, Jeff ^a   Eisenbeiser, Kurt ^a   Wang, Jun ^a   Kaushik, V ^b   Ngyuen, B Y ^b   Ooms, Bill ^a  

^a MOTOROLA INC   (United States)

^b Structures and Materials   (United States)

Author keywords

A3. Molecular beam epitaxy; B1. Oxides; B1. Perovskites; B2. Dieelectric materials

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; PEROVSKITE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; STRONTIUM COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE; X RAY CRYSTALLOGRAPHY;

EPITAXIAL OXIDES;

OXIDES;

EID: 0035398990     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00931-9     Document Type: Conference Paper

References (28)