Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Auciello, O ^a   Fan, W ^a   Kabius, B ^a   Saha, S ^a   Carlisle, J A ^a   Chang, R P H ^b   Lopez, C ^c   Irene, E A ^c   Baragiola, R A ^d  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b Northwestern University   (United States)

^c University of North Carolina at Chapel Hill   (United States)

^d University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMIC OXYGEN; EQUIVALENT OXIDE THICKNESS (EOT); POSTDEPOSITION OXIDATION;

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; DIFFUSION; ELECTRODES; MOLECULAR BEAMS; OXIDATION; PHONONS; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM COMPOUNDS;

EID: 13744250526     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1856137     Document Type: Article

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