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Applied Physics Letters

Volumn 86, Issue 12, 2005, Pages 1-3

Potential imaging of Si/HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole

(5) Ludeke, R a Narayanan, V a Gusev, E P a Cartier, E a Chey, S J a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC POTENTIAL; FERMI LEVEL; HOLE TRAPS; IMAGING TECHNIQUES; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS;

BANDGAP; FLATBOND VOLTAGE; GATE STACKS; HOLE TRAPPING; POTENTIAL IMAGING;

SILICON COMPOUNDS;

EID: 17944377278 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1890483 Document Type: Article

Times cited : (8)

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