Review on high-k dielectrics reliability issues

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 1, 2005, Pages 5-19

  Ribes, G ^a   Mitard, J ^b   Denais, M ^a   Bruyere, S ^a   Monsieur, F ^a   Parthasarathy, C ^a   Vincent, E ^a   Ghibaudo, G ^c  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c IMEP LAHC   (France)

Author keywords

Breakdown; BTI; High k dielectrics; Hysteresis

Indexed keywords

BAND STRUCTURE; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRON TRAPS; HYSTERESIS; LEAKAGE CURRENTS; RELIABILITY; SILICA;

BIAS TEMPERATURE INSTABILITY (BTI); BREAKDOWN; HIGH-Κ DIELECTRICS; LEAKAGE;

DIELECTRIC MATERIALS;

EID: 20444441991     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2005.845236     Document Type: Review

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