Point defects in ZrO2 high-κ gate oxide

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 1, 2005, Pages 84-89

  Robertson, John ^a   Xiong, Ka ^a   Falabretti, Barbara ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Defects; Gate oxide; High dielectric constant

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CHEMICAL BONDS; DEFECTS; ELECTRON TRAPS; LEAKAGE CURRENTS; PERMITTIVITY; POINT DEFECTS; SILICON;

GATE OXIDES; GENERALIZED GRADIENT APPROXIMATION (GGA); HIGH DIELECTRIC CONSTANTS; LOCAL DENSITY APPROXIMATION (LDA);

ZIRCONIA;

EID: 20444471581     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2005.845476     Document Type: Article

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