Passivation and interface state density of SiO2/HfO 2-based/polycrystalline-Si gate stacks

Applied Physics Letters

Volumn 83, Issue 3, 2003, Pages 533-535

  Carter, R J ^a   Cartier, E ^a   Kerber, A ^a   Pantisano, L ^a   Schram, T ^a   De Gendt, S ^a   Heyns, M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; GATES (TRANSISTOR); HYDROGEN; INTERFACES (MATERIALS); PASSIVATION; SILICA; SUBSTRATES;

GATE STACKS;

POLYCRYSTALLINE MATERIALS;

EID: 0042158768     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592639     Document Type: Article

References (16)

1. P. J. Caplan, E. H. Poindexter, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 50, 5847 (1979).
2. K. L. Brower and S. M. Myers, Appl. Phys. Lett. 57, 162 (1990).
3. E. Cartier, J. H. Stathis, and D. A. Buchanan, Appl. Phys. Lett. 63, 1510 (1993).
4. A. Stesmans and V. V. Afanas'ev, Appl. Phys. Lett. 72, 2271 (1998).
5. Y. Kim, G. Gebara, M. Freiler, J. Barnett, D. Riley, J. Chen, K. Torres, J. Lim, B. Foran, F. Shaapur, A. Agarwal, P. Lysaght, G. Brown, C. Young, S. Borthakur, H. Li, B. Nguyen, P. Zeitzoff, G. Bersuker, D. Derro, R. Bergmann, R. Murto, A. Hou, H. Huff, E. Shero, C. Pomarede, M. Givens, M. Mazanec, and C. Werkhoven, Tech. Dig. - Int. Electron Devices Meet. 2001, 20.2.1 (2001).
6. S. Guha, E. P. Gusev, H. Okorn-Schmidt, M. Copel, L.-Å Ragnarsson, and N. A. Bojarczuk, Appl. Phys. Lett. 81, 2956 (2002).
7. A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, A. Hou, G. Groeseneken, H. Maes, and U. Schwalke, IEEE Electron Device Lett. 24, 87 (2003).
8. M. Hiratani, S. Saito, Y. Shimamoto, and K. Torii, Jpn. J. Appl. Phys., Part 1 41, 4521 (2002).
9. J. Lee, C. Hegarty, and C. Hu, IEEE Electron Device Lett. 9, 324 (1988).
10. T. Suntola, Handbook of Crystal Growth (Elsevier Science, New York, 1994), Vol. 3, p. 615.
11. J. I. Skarp, P. J. Soininen, and P. T. Soininen, Appl. Surf. Sci. 112, 251 (1997).
12. M. Ritala and M. Leskela, Appl. Surf. Sci. 75, 333 (1994).
13. M. J. Uren, J. H. Stathis, and E. Cartier, J. Appl. Phys. 80, 3915 (1996).
14. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), p. 197.
15. H. Bender, T. Conard, H. Nohira, J. Pétry, O. Richard, C. Zhao, B. Brijs, W. Besling, C. Detavernier, W. Vandervorst, M. Caymax, S. De Gendt, J. Chen, J. Kluth, W. Tsai, and J.-W. Maes IWGI conference, Tokyo, Japan, Nov. 2001.
16. D. J. DiMaria and E. Cartier, J. Appl. Phys. 78, 3883 (1995).