Thermal stability of polycrystalline silicon electrodes on ZrO2 gate dielectrics

Applied Physics Letters

Volumn 81, Issue 8, 2002, Pages 1417-1419

  Perkins, Charles M ^a   Triplett, Baylor B ^a   McIntyre, Paul C ^a   Saraswat, Krishna C ^a   Shero, Eric ^b  

^a Stanford University   (United States)

^b ASM AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENTS; DEPOSITION PROCESS; GATE STACK STRUCTURE; METAL OXIDE FILM; OXYGEN DEFICIENCY; POLY-CRYSTALLINE SILICON; ROOM TEMPERATURE; SILICIDE FORMATION; SILICON ELECTRODE;

ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; ELECTRODES; METALLIC COMPOUNDS; OXIDE FILMS; PHYSICAL VAPOR DEPOSITION; POLYSILICON; SILICIDES; THERMODYNAMIC STABILITY; ZIRCONIUM; ZIRCONIUM ALLOYS;

GATE DIELECTRICS;

EID: 79956005998     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1499513     Document Type: Article

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