Structural and electrical quality of the high-k dielectric Y 2O 3 on Si (001): Dependence on growth parameters

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 426-431

  Dimoulas, A ^a   Vellianitis, G ^a   Travlos, A ^a   Ioannou Sougleridis, V ^b   Nassiopoulou, A G ^b  

^a INSTITUTE OF MATERIALS SCIENCE   (Greece)

^b INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; CRYSTALLINE QUALITY; E BEAM EVAPORATION; ELECTRICAL BEHAVIORS; ELECTRICAL QUALITY; GROWTH PARAMETERS; HIGH TEMPERATURE; HIGH-K DIELECTRIC; IN-SITU ANNEALING; INTERMEDIATE TEMPERATURES; LOW-LEAKAGE CURRENT; POLYCRYSTALLINITY; SHARP INTERFACE; SI (001) SUBSTRATE; SI(0 0 1); SILICON SUBSTRATES; STRUCTURAL QUALITIES;

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; EPITAXIAL FILMS; EPITAXIAL GROWTH; SILICON;

ELECTRIC PROPERTIES;

EID: 0036639059     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483379     Document Type: Article

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