Interfacial layer-induced mobility degradation in high-k transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7899-7902

  Bersuker, G ^a   Barnett, J ^a   Moumen, N ^a   Foran, B ^a   Young, C D ^a   Lysaght, P ^a   Peterson, J ^a   Lee, B H ^a   Zeitzoff, P M ^a   Huff, H R ^a  

^a SEMATECH   (United States)

Author keywords

High k dielectrics; Interface; Mobility

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; DATA ACQUISITION; DIELECTRIC MATERIALS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON TRAPS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); HIGH-K DIELECTRICS; INTERFACES; INTERFACIAL LAYERS;

TRANSISTORS;

EID: 19944430988     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7899     Document Type: Conference Paper

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