Band gaps and defect levels in functional oxides

Thin Solid Films

Volumn 496, Issue 1, 2006, Pages 1-7

  Robertson, J ^a   Xiong, K ^a   Clark, S J ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b DURHAM UNIVERSITY   (United Kingdom)

Author keywords

Band structure; Oxides; Vacancies

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; DEFECTS; ELECTRIC INSULATORS; OXIDES; OXYGEN; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DEVICES; STRUCTURAL DESIGN;

AB-INITIO CALCULATIONS; DEFECT LEVELS; STRUCTURAL DATA; VACANCIES;

ELECTRONIC STRUCTURE;

EID: 28044473015     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.175     Document Type: Conference Paper

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