Work function and thermal stability of Ti1-xAlxNy for dual metal gate electrodes

Applied Physics Letters

Volumn 81, Issue 22, 2002, Pages 4192-4194

  Cha, Tae Ho ^a   Park, Dae Gyu ^b   Kim, Tae Kyun ^a   Jang, Se Aug ^a   Yeo, In Seok ^a   Roh, Jae Sung ^a   Park, Jin Won ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CAPACITANCE; ELECTRODES; MOS DEVICES; SILICA; SPECTRUM ANALYSIS; SPUTTER DEPOSITION; TITANIUM COMPOUNDS;

METAL GATE ELECTRODES;

SEMICONDUCTING FILMS;

EID: 0037175948     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1523651     Document Type: Article

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