Electrical Characteristics for Lu2O3 Thin Films Fabricated by E-Beam Deposition Method

Journal of the Electrochemical Society

Volumn 151, Issue 4, 2004, Pages

  Ohmi, S ^a   Takeda, M ^a   Ishiwara, H ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; CURRENT DENSITY; DIELECTRIC DEVICES; ELECTRICAL ENGINEERING; ELECTRODES; ELLIPSOMETRY; LUTETIUM COMPOUNDS; RARE EARTH ELEMENTS; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS; THERMODYNAMICS;

CAPACITANCE EQUIVALENT THICKNESS (CET); HYGROSCOPIC IMMUNITY; METAL-INSULATOR SEMICONDUCTOR (MIS);

THIN FILMS;

EID: 2042481372     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1667523     Document Type: Article

References (27)

1. D. Barlage, R. Arghavani, G. Dewey, M. Doczy, B. Doyle, J. Kavalieros, A. Murthy, B. Roberds, P. Stokley, and R. Chau, Tech. Dig. - Int. Electron Devices Meet., 2001, 231.
2. E. P. Gusev, D. A. Buchanan, E. Cartier, A. Kumar, D. DiMaria, S. Guha, A. Callegari, S. Zafar, P. C. Jamison, D. A. Neumayer, M. Copel, M. A. Gribelyuk, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L.-A. Ragnarsson, P. Ronsheim, K. Rim, R. J. Fleming, A. Mocuta, and A. Ajmera, Tech. Dig. Int. Electron Devices Meet., 2001, 451.
3. Y. Kim, G. Gebara, M. Freiler, J. Barnett, D. Riley, J. Chen, K. Torres, J. E. Lim, B. Foran, F. Shaapur, A. Agarwal, P. Lysaght, G. A. Brown, C. Young, S. Borthakur, H.-J. Li, B. Nguyen, P. Zeitzoff, G. Bersuker, D. Derro, R. Bergmann, R. Murto, A. Hou, H. R. Huff, E. Shero, C. Pomarede, M. Givens, M. Mazanec, and C. Werkhoven, Tech. Dig. - Int. Electron Devices Meet., 2001, 455.
4. M. Koyama, K. Suguro, M. Yoshiki, Y. Kamimuta, M. Koike, M. Ohse, C. Kongo, and A. Nishiyama, Tech. Dig. - Int. Electron Devices Meet., 2001, 459.
5. W. Zhu, T. P. Ma, T. Tamagawa, Y. Di, J. Kim, R. Carruthers, M. Gibson, and T. Furukawa, Tech. Dig. - Int. Electron Devices Meet., 2001, 463.
6. H. Zhong, S.-N. Hong, Y.-S. Sun, H. Lazar, G. Heuss, and V. Misra, Tech. Dig. - Int. Electron Devices Meet., 2001, 467.
7. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J, Appl, Phys., 89, 5243 (2001).
8. A. Chin, Y. H. Wu, S. B. Chen, C. C. Liao, and W, J. Chen, Tech. Digest, for VLSI Symposium, 2000, 16.
9. H. J. Osten, J. P. Liu, P. Gaworzewski, E. Bugiel, and P. Zaumseil, Tech. Dig. - Int. Electron Devices Meet., 2000, 653.
10. J. A. Gupta, D. Landheer, J. P. McCaffrey, and G. I. Sproule, Appl. Phys. Lett., 78, 1718 (2001).
11. S. Jeon, K. Im, H. Yang, H. Lee, H. Sim, S. Choi, T. Jang, and H. Hwang, Tech. Dig. - Int. Electron Devices Meet., 2001, 471.
12. S. Ohmi, C. Kobayashi, I. Kashiwagi, C. Ohshima, H. Ishiwara, and H. Iwai, J. Electrochem. Soc., 150, F134 (2003).
13. J. R. Hauser, in Sub-100 nm CMOS, IEDM short course (1999).
14. R. D. Shannon, J. Appl. Phys., 73, 348 (1993).
15. D. Xue, K. Betzler, and H. Hesse, J. Phys.: Condens. Matter. 12, 3113 (2000).
16. K. J. Hubbard and D. G. Schlom, J. Mater. Res., 11, 2757 (1996).
17. A. V. Prokofiev, A. I. Shelykh, and B. T. Melekh, J. Alloys Compd., 242, 41 (1996).
18. L. S. Morss, Chem. Rev. (Washington, D.C.), 70, 827 (1976).
19. G. Adachi and N. Imanaka, Chem. Rev. (Washington, D.C.), 98, 1479 (1998).
20. H. Nohira, T. Shiraishi, T. Nakamura, K. Takahashi, M. Takeda, S. Ohmi, H. Iwai, and T. Hattori, Appl. Surf. Sci., 216, 234 (2003).
21. S. Ohmi, M. Takeda, H. Ishiwara, and H. Iwai, in Semiconductor Technology (ISTC 2001), M. Yang, Editor, PV 2001-17, p. 251, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).
22. J.-P. Maria, D. Wicaksana, A. I. Kingon, B. Busch, H. Schulte, E. Garfunkel, and T. Gustafsson, J. Appl. Phys., 90, 3476 (2001).
23. T. Gougousi, M. J. Kelly, and G. N. Persons, Appl. Phys. Lett., 80, 4419 (2002).
24. M. Copel, E. Cartier, and F. M. Ross, Appl. Phys. Lett., 78, 1607 (2001).
25. S. Guha, E. Cartier, M. A. Gribelyuk, N. A. Bojarczuk, and M. C. Copel, Appl. Phys. Lett., 77, 2710 (2000).
26. S. Akama, A. Kikuchi, J. Tonotani, S. Ohmi, and H. Iwai, in Proceedings of the 32nd ESSDERC, p. 587 (2002).
27. A. Kikuchi, S, Akama, S. Ohmi, and H. Iwai, Abstract 386, The Electrochemical Society Meeting Abstracts, Vol. 2002-2, Salt Lake City, UT, Oct 20-25, 2002.