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Applied Physics Letters

Volumn 86, Issue 25, 2005, Pages 1-3

Interfacial segregation of dopants in fully silicided metal-oxide- semiconductor gates

(3) Copel, M a Pezzi, R P a,b Cabral Jr , C a

a IBM T J WATSON RESEARCH CENTER (United States)

b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

FULLY SILICIDED (FUSI) DEVICES; INTERFACIAL SITES; MEDIUM ENERGY ION SCATTERING (MEIS); SURFACE SCIENCE TECHNIQUES;

ANTIMONY; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); INTERFACES (MATERIALS); KINEMATICS; OXIDATION; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

MOS DEVICES;

EID: 24644487446 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1951046 Document Type: Article

Times cited : (16)

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