Band alignment between (100)Si and complex rare earthtransition metal oxides

Applied Physics Letters

Volumn 85, Issue 24, 2004, Pages 5917-5919

  Afanas'ev, V V ^a   Stesmans, A ^a   Zhao, C ^b   Caymax, M ^b   Heeg, T ^c   Schubert, J ^c   Jia, Y ^d   Schlom, D G ^d   Lucovsky, G ^e  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

^e NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY BAND; INTERNAL PHOTOEMISSION; SPECTRAL CURVES; TRANSITION METAL OXIDES;

ELECTRON TUBES; GADOLINIUM COMPOUNDS; LIGHT EMITTING DIODES; MOS DEVICES; OXIDATION; PHOTOEMISSION; TRANSITION METALS; VACUUM;

SILICON;

EID: 17744390392     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1829781     Document Type: Article

References (18)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. S. G. Lim, S. Kriventsov, T. N. Jackson, J. H. Haeni, D. G. Schlom, A. M. Balbashov, R. Uecker, P. Reiche, J. L. Freeouf, and G. Lucovsky, J. Appl. Phys. 91, 4500 (2002).
3. M. Leskela and M. Ritala, J. Solid State Chem. 171, 170 (2003).
4. B. E. Park and H. Ishiwara, Appl. Phys. Lett. 82, 1197 (2003).
5. G. Lucovsky, Y. Zhang, J. L. Whitten, D. G. Schlom, and J. L. Freeouf, Microelectron. Eng. 72, 288 (2004).
6. V. V. Afanas'ev, A. Stesmans, and W. Tsai, Appl. Phys. Lett. 82, 245 (2003).
7. A. V. Prokofiev, A. I. Shelykh, and B. T. Melekh, J. Alloys Compd. 242, 41 (1996).
8. V. V. Afanas'ev and A. Stesmans, in High- κ Gate Dielectrics, edited by, M. Houssa, (IOP, Bristol, 2004), p. 217.
9. T. H. DiStefano and D. E. Eastman, Solid State Commun. 9, 2259 (1971).
10. H. H. Tippins, J. Phys. Chem. Solids 27, 1069 (1966).
11. H. Öfner, M. G. Ramsey, F. P. Netzer, J. A. D. Matthew, and F. N. Yousif, J. Phys.: Condens. Matter 6, 3453 (1994).
12. V. V. Afanas'ev, M. Houssa, A. Stesmans, and M. M. Heyns, Appl. Phys. Lett. 78, 3073 (2001).
13. R. J. Powell, J. Appl. Phys. 41, 2424 (1970).
14. V. V. Afanas'ev, A. Stesmans, F. Chen, X. Shi, and S. A. Campbell, Appl. Phys. Lett. 81, 1053 (2002).
15. L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerella, J. L. Freeouf, B. Holländer, and J. Schubert, Appl. Phys. Lett. 84, 726 (2004).
16. V. V. Afanas'ev, A. Stesmans, F. Chen, M. Li, and S. A. Campbell, J. Appl. Phys. 95, 7935 (2004).
17. G. B. Rayner, D. Kang, Y. Zhang, and G. Lucovsky, J. Vac. Sci. Technol. B 20, 1748 (2002).
18. G. Lucovsky, Y. Zhang, J. L. Whitten, D. G. Schlom, and J. L. Freeouf, Physica E (Amsterdam) 21, 712 (2004).