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Volumn 549, Issue 1, 2004, Pages 67-86

Mechanism and kinetics of thin zirconium and hafnium oxide film growth in an ALD reactor

Author keywords

Dielectric phenomena; Growth; Hafnium; Models of surface kinetics; Surface chemical reaction; Zirconium

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; MONTE CARLO METHODS; PROBABILITY DENSITY FUNCTION; SURFACE REACTIONS;

EID: 0347604215     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.10.056     Document Type: Article
Times cited : (52)

References (43)
  • 12
    • 0347386049 scopus 로고    scopus 로고
    • Ph.D. Thesis, Helsinki University of Technology, Finland
    • A. Kytokivi, Ph.D. Thesis, Helsinki University of Technology, Finland, 1997.
    • (1997)
    • Kytokivi, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.