Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

Applied Physics Letters

Volumn 81, Issue 22, 2002, Pages 4218-4220

  Ho, M Y ^a   Gong, H ^a   Wilk, G D ^b   Busch, B W ^b,g   Green, M L ^b   Lin, W H ^c   See, A ^c   Lahiri, S K ^d,h   Loomans, M E ^d   Räisänen, Petri I ^e   Gustafsson, T ^f  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b AGERE SYSTEMS   (United States)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^e ASM AMERICA   (United States)

^f RUTGERS UNIVERSITY   (United States)

^g MICRON TECHNOLOGY INC   (United States)

^h NanoNexus Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ALUMINA; AMORPHOUS FILMS; ANNEALING; COMPOSITION; CRYSTALLIZATION; DEPOSITION; HAFNIUM; POSITIVE IONS; SCATTERING; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYER DEPOSITION;

DIELECTRIC FILMS;

EID: 0037175859     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1522826     Document Type: Article

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