The interface phase and the Schottky barrier for a crystalline dielectric on silicon

Science

Volumn 300, Issue 5626, 2003, Pages 1726-1730

  McKee, R A ^a   Walker, F J ^a,b   Nardelli, M Buongiorno ^a,c   Shelton, W A ^a   Stocks, G M ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF TENNESSEE   (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; DIELECTRIC DEVICES; ELECTROSTATICS; PHASE INTERFACES; SCHOTTKY BARRIER DIODES;

HETEROEPITAXY;

SEMICONDUCTOR DEVICES;

SILICON;

DIELECTRIC PROPERTY; ELECTRON; SILICON;

ARTICLE; CHEMICAL MODIFICATION; CRYSTAL STRUCTURE; DIELECTRIC CONSTANT; ELECTRICITY; ELECTRON TRANSPORT; PHASE TRANSITION; PRIORITY JOURNAL; SEMICONDUCTOR; STRUCTURE ANALYSIS;

EID: 0038179370     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1083894     Document Type: Article

References (30)

1. W. Schottky, Phys. Z. 113, 367 (1940).
2. N. F. Mott, Proc. Cambridge Philos. Soc. 34, 568 (1938).
3. R. L. Anderson, Solid-State Electron. 5, 341 (1962).
4. For a review of these issues, see the monograph by W. Monch, Semiconductor Surfaces and Interfaces (Springer, Berlin, ed. 3, 2001).
5. A. Franciosi, C. G. Van de Walle, Surf. Sci. Rep. 25, 1 (1996).
6. A. A. Demkov, O. F. Sankey, Phys. Rev. Lett. 83, 2038 (1999).
7. S. G. Louie, M. L. Cohen, Phys. Rev. B 13, 2461 (1976).
8. W. R. Frensley, H. Kroemer, Phys. Rev. B 16, 2642 (1977).
9. W. A. Harrison, E. A. Kraut, J. R. Waldrop, R. W. Grant, Phys. Rev. B 18, 4402 (1978).
10. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
11. W. A. Harrison, J. Tersoff, J. Vac. Sci. Technol. B 4, 1068 (1986).
12. W. Monch, Appl. Phys. Lett. 72, 1899 (1998).
13. A. Baldereschi, S. Baroni, R. Resta, Phys. Rev. Lett. 61, 734 (1988).
14. M. Peressi, S. Baroni, R. Resta, A. Baldereschi, Phys. Rev. B 43, 7347 (1991).
15. F. Leonard, J. Tersoff, Phys. Rev. Lett. 84, 4693 (2000).
16. R. T. Tung, Phys. Rev. Lett. 84, 6078 (2000).
17. R. T. Tung, Phys. Rev. B 64, 205310 (2001).
18. R. T. Tung, Mater. Sci. Eng. 35, 1 (2001).
19. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
20. P. Ghosez, K. M. Rabe, Appl. Phys. Lett. 76, 2767 (2000).
21. R. A. McKee, F. J. Walker, M. F. Chisholm, Science 293, 468 (2001).
22. R. A. McKee, F. J. Walker, M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998).
23. R. A. McKee, F. J. Walker, J. R. Conner, R. Raj, Appl. Phys. Lett. 63, 2818 (1993).
24. R. A. McKee, F. J. Walker, E. D. Specht, G. E. Jellisen, L. A. Boatner, Phys. Rev. Lett. 72, 2741 (1994).
25. A. P. Sutton, R. W. Balluffi, in Interfaces in Crystalline Materials (Clarendon Press, Oxford, 1995), pp. 349-394.
26. E. A. Kraut, R. W. Grant, J. R. Waldrop, S. P. Kowalczyk, Phys. Rev. Lett. 44, 1623 (1980).
27. Materials and methods are available as supporting material on Science Online.
28. Calculations in this work have been done with the use of the PWscf package (S. Baroni, A. Dal Corso, S. de Gironcoli, P. Glannozzi, Plane Wave Self-Consistent Field, Trieste, Italy), available online at www.pwscf.org/.
29. A. M. Stoneham, J. Dhote, "A compilation of crystal data for halides and oxides" (University College London, London, 2002), available online from www. cmmp.ucl.ac.uk/-ahh/research/crystal/homepage.htm, and references contained therein.
30. We acknowledge the careful review and comments on our manuscript provided by G. Ice, M. Chisholm, D. Nicholson, L. Christiaens, and C. McKee. Research sponsored jointly by the Defense Advanced Research Projects Agency (DAAS19-01010-650) and the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy at Oak Ridge National Laboratory under contract DE-AC05-00OR22725 with UT-Battelle, Limited Liability Corporation, and at the University of Tennessee under contract DEFG02-01ER45937.