Electrical characteristics of HfO2 dielectrics with Ru metal gate electrodes

Journal of the Electrochemical Society

Volumn 152, Issue 9, 2005, Pages

  Suh, You Seok ^a   Lazar, Heather ^a   Chen, Bei ^a   Lee, Jae Hoon ^a   Misra, Veena ^a,b  

^a North Carolina State University   (United States)

^b Submicron Development Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRODES; MOS CAPACITORS; OXIDATION; RUTHENIUM; THERMODYNAMIC STABILITY; THIN FILMS;

ELECTRICAL CHARACTERISTICS; HAFNIUM OXIDES; LEAKAGE CURRENT DENSITY;

HAFNIUM COMPOUNDS;

EID: 25644446728     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1992467     Document Type: Article

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