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Volumn 84, Issue 12, 2004, Pages 2064-2066

Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO 2 dielectrics: In situ annealing studies

(4) Kim, Hyoungsub a Marshall, Ann a McIntyre, Paul C a Saraswat, Krishna C a

a Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); INTERFACIAL GROWTH;

ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; KINETIC THEORY; LEAKAGE CURRENTS; MICROSTRUCTURE; MOSFET DEVICES; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY;

ULTRATHIN FILMS;

EID: 1942540819 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1667621 Document Type: Article

Times cited : (73)

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