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Volumn 293, Issue 5529, 2001, Pages 468-471

Physical structure and inversion charge at a semiconductor interface with a crystalline oxide

(3) McKee, R A a Walker, F J a Chisholm, M F a

a OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; OXIDES;

POLAR OXIDE;

MOS DEVICES;

OXIDE;

OXIDE; PHYSICAL PROPERTY;

ARTICLE; ELECTRIC ACTIVITY; ELECTRICITY; ELECTRONICS; PRIORITY JOURNAL; SEMICONDUCTOR; SOLID STATE;

EID: 0035919629 PISSN: 00368075 EISSN: None Source Type: Journal
DOI: 10.1126/science.293.5529.468 Document Type: Article

Times cited : (298)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.