Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 384-390

  Onishi, Katsunori ^a   Kang, Chang Seok ^a   Choi, Rino ^a   Cho, Hag Ju ^a   Gopalan, Sundar ^a   Nieh, Renee E ^a   Krishnan, Siddharth A ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Charge pumping; CMOSFETs; Hafnium; HfO2; High gate dielectric; Mobility; Polysilicon gate; Subthreshold swing; Surface states

Indexed keywords

ANNEALING; ELECTRON MOBILITY; GASES; GATES (TRANSISTOR); LEAKAGE CURRENTS; POLYSILICON;

GAS ANNEALING;

MOSFET DEVICES;

EID: 0037687347     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.807447     Document Type: Article

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