메뉴 건너뛰기




Volumn 76, Issue 10, 2000, Pages 1324-1326

Field effect transistors with SrTiO3 gate dielectric on Si

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001642112     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126023     Document Type: Article
Times cited : (302)

References (26)
  • 19
    • 0001954222 scopus 로고    scopus 로고
    • edited by D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters The American Institute of Physics. New York
    • J. R. Hauser and K. Ahmed, in Characterization and Metrology for ULSI Technology: 1998 International Conference, edited by D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters (The American Institute of Physics. New York, 1998), pp. 235-239.
    • (1998) Characterization and Metrology for ULSI Technology: 1998 International Conference , pp. 235-239
    • Hauser, J.R.1    Ahmed, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.