Interface reactions in ZrO 2 based gate dielectric stacks

Journal of Applied Physics

Volumn 92, Issue 3, 2002, Pages 1232-1237

  Gribelyuk, M A ^a   Callegari, A ^b   Gusev, E P ^b   Copel, M ^b   Buchanan, D A ^b  

^a IBM MICROELECTRONICS   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; EPITAXIAL RELATIONSHIPS; GATE DIELECTRIC STACKS; GATE STACKS; INTERFACE REACTIONS; INTERFACIAL LAYER; REACTION MECHANISM; SI(1 0 0); THERMALLY UNSTABLE; ULTRA-THIN;

SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ZIRCONIUM ALLOYS;

EID: 0036678139     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486036     Document Type: Article

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