An accurate determination of barrier heights at the HfO 2/Si interfaces

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2701-2707

  Puthenkovilakam, Ragesh ^a   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BOND STATES; CONDUCTION BANDS; DENSITY FUNCTIONAL THEORY (DFT); LOCAL DENSITY APPROXIMATION (LDA);

APPROXIMATION THEORY; BAND STRUCTURE; COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); MOSFET DEVICES; OXYGEN; RELAXATION PROCESSES; SEMICONDUCTOR JUNCTIONS; SILICON; STOICHIOMETRY; SURFACE PHENOMENA; TRANSPORT PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 4944250746     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1778213     Document Type: Article

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