Epitaxial SrTiO3 on silicon with EOT of 5.4Å for MOS gate dielectric applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 955-957

  Jeon, Sanghun ^a,b   Walker, Frederick J ^b   Billman, Curtis A ^b   McKee, Rodney A ^b   Hwang, Hyunsang ^a,b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MOS DEVICES; OXIDATION; SILICON;

EQUIVALENT OXIDE THICKNESS (EOT);

STRONTIUM COMPOUNDS;

EID: 0036931318     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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