Electrostatic potential perturbation at the polycrystalline SiHf O2 interface

Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-3

  Afanas'ev, V V ^a   Stesmans, A ^a   Pantisano, L ^b   Chen, P J ^c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON SPIN RESONANCE SPECTROSCOPY; FERMI LEVEL; HAFNIUM COMPOUNDS; MOS DEVICES; PHOTOEMISSION; POLYCRYSTALLINE MATERIALS; SILICON;

BARRIER HEIGHTS; ELECTROSTATIC POTENTIAL; ENERGY BARRIERS; PHOTON ENERGY;

INTERFACES (MATERIALS);

EID: 17044372843     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1850597     Document Type: Article

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